Bongmook Lee

Bongmook Lee

Ph.D.
SUNY Poly Logo
Associate Professor

Contact

Phone Number:
(315) 351-3578
Email:
leeb1@sunypoly.edu
Office Address:
Kunsela
C217
Department
Engineering Department
College
College of Engineering
Social Links

Degrees

  • Ph.D., ECE Department, North Carolina State University, Raleigh, NC
    • Area of concentration: Solid State Physics
  • M.S., ECE Department, North Carolina State University, Raleigh NC
  • B.S., Electronic Materials Engineering, Gwangwoon University, Seoul, South Korea

Areas of Research

  • Semiconductor device physics, solid state devices
  • Design and fabrication of power semiconductor devices (GaN, SiC, Ga2O3, etc)
  • Advanced MEMS-based environmental sensors
  • Wearable sensors and systems
  • Next-generation Non-volatile memory
  • New materials and devices for energy applications

Nanostructures and Nano-devices

Current Research Activities:

Wide Bandgap Power Electronics and Devices

  • Design and develop high-performance Silicon Carbide power devices, CMOS, and Power ICs
  • Design and fabricate high-current lateral and vertical GaN devices
  • Evaluate wide-bandgap device reliability (TDDB, HTRB, HTGB, PBTI&NBTI)
  • Develop ultra-wide bandgap semiconductor materials and devices (Ga2O3, AlN, Diamond, etc)

Metal oxide sensors for environmental and health monitoring

  • Design and Fabrication of ultra-low power metal oxide gas sensors
  • Develop a novel metal oxide nanostructure for gas sensing applications
  • Build highly scaled and multi-material metal oxide sensor array

Wearable system

  • Design and built a wearable armband system for ECG and EDA monitoring
  • Analyze data in the frequency domain for Sympathetic Nerve Activity Monitoring
  • Design and fabricate a portable monitoring system for indoor E-cigarette emission and skin vapor sensing system

Publications

Dr. Lee's research interests cover the broad area of device design, materials, fabrication, and characterization with the current focus on wide bandgap SiC, GaN, and Ga2O3 power devices, wide bandgap power integrated circuits, micro/nanoelectronic devices, wearable systems, and advanced semiconductor materials.

My H-index is currently 17 and my I-10 index, publications with 10 or more citations, is 30 with 1330 citations for all years. (42 peer-reviewed journals, 41 peer-reviewed conference proceedings, 37 conference abstracts/poster/talks, and 10 invention disclosures/3 provisional patents/2 patent)

Referred Journal Articles

  1. Y Zhou, F. Mohaddes, C, Lee, S. Rao, A. Mills, A. Curry, B. Lee*, and V. Misra, “A wearable electrocardiography armband resilient against artifacts”, IEEE Sensors Journal, 22 (19), 18970, 202
  2. T. Liu, H. Zhang, S. Isukapati, E. Ashik, B. Lee, A. Morgan, W. Sung, Marvin H. White, A. Fayed, and A. Agarwal, “Spice modeling and circuit development of a SiC power IC technology”, IEEE Journal of the Electron Devices Society, vol. 10, pp. 129-138, 2022.
  3. F. Mohaddes, R. L. da Silva, F. Akbulut, Y. Zhou, A. Tanneeru, E. Lobaton, B. Lee*, and V. Misra, “A pipeline for adaptive filtering and transformation of noisy left-arm ECG to its surrogate chest signal”, Electronics, 9, 866, 2020.
  4. F. Azam, A. Tanneeru, B. Lee, and V. Misra, “Engineering a Unified Dielectric Solution for AlGaN/GaN MOS-HFET Gate and Access Regions”, IEEE Transaction on Electron Devices, vol. 67 (3), pp. 881-887, 2020.
  5. X. Yang, B. Lee, and V. Misra, “Effects of LaSiOx thickness and Forming Gas Anneal temperature on threshold voltage instability of 4H-SiC MOSFETs”, IEEE Transactions on Electron device, vol. 66 (1), pp. 539-545, 2019.
  6. M. Lim, S. Mills, B. Lee*, and V. Misra, “Investigation of O3 adsorption on ultra-thin ALD SnO2 by QCM”, IEEE Sensors Journal, vol. 18 (9), pp. 3590-3594, 2018.
  7. X. Yang, B. Lee, and V. Misra, “Improvement of Threshold Voltage Reliability of 4H-SiC MOSFETs with Lanthanum Silicate by High Temperature Forming Gas Anneal”, IEEE Electron Device Letters, vol. 39 (2), pp. 244-247, 2018.
  8. B. Sarkar, S. Mills, B. Lee, S. Pitts, V. Misra, and P. D. Franzon, “On Using the Volatile Mem-Capacitive Effect of TiO2 Resistive Random Access Memory to Mimic the Synaptic forgetting Process”, Journal of Electronic Materials, vol. 47 (2), pp. 994-997, 2018.
  9. Y. Jiang, W. Sung, J. Baliga, S. Wang, B. Lee, and A. Q. Huang, Electrical Characterization of 10-KV 4H-SiC MPS Rectifier with High Schottky Barrier Height”, Journal of Electronic Materials, 47 (2), pp. 927-931, 2018.
  10. J. Dieffenderfer, H. Goodell, S. Mills, M. McKnight, S. Yao, F. Lin, E. Beppler, B. Bent, B. Lee, V. Misra, Y. Zhu, O. Oralkan, J. Strohmaier, J. Muth, D. Peden, and A. Bozkurt, “Low Power Wearable Systems for Continuous Monitoring of Environment and Health for Chronic Respiratory Disease”, IEEE Journal of Biomedical and Health Informatics, vol. 20 (5), pp. 1251-1264, 2016.
  11. X. Yang, B. Lee, and V. Misra, “Electrical Characteristics of SiO2 deposited by Atomic Layer Deposition on 4H-SiC after Nitrous Oxide Anneal”, IEEE Transactions on Electron Devices, vol. 63 (7), pp. 2826-2830, 2016.
  12. N. Ramanan, B. Lee, and V. Misra, “Physical Understanding of Trends in Current Collapse with Atomic Layer Deposited Dielectrics in AlGaN/GaN MOS HFETs”, Semicod. Sci. Technol., 31(3), 035016, 2016.
  13. R. Singamaneni, J. Prater, B. Lee, V. Misra, and J. Narayan, “Memristive behavior in BaTiO3/La0.7Sr0.3MnO3 heterostructures integrated with semiconductors”, MRS Advances, vol. (1), pp. 1-6, 2016.
  14. X. Yang, B. Lee, and V. Misra, “Investigation of lanthanum silicate conditions on 4H-SiC MOSFET characteristics”, IEEE Transactions on Electron Devices, vol. 62 (11), pp. 3781-3785, 2015.
  15. N. Ramanan, B. Lee, and V. Misra, “ALD gate dielectrics for improved threshold voltage stability in AlGaN/GaN MOS-HFETs for power applications”, Semicod. Sci. Technol., v. 30 (12), 115017, 2015.
  16. B. Sarkar, B. Lee, and V. Misra, “Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic application”, Semicod. Sci. Technol., v. 30 (10), 105014, 2015.
  17. M. Lim, S. Mills, B. Lee, and V. Misra, “Application of AlGaN/GaN Heterostructures for ultra-low power nitrogen dioxide sensing”, ECS Journal of Solid State Science and Technology, v. 4 (10), S3034-S3037, 2015.
  18. S. Mills, M. Lim, B. Lee, and V. Misra, “Atomic layer deposition of SnO2 for selective room temperature low ppb level O3 sensing”, ECS Journal of Solid State Science and Technology, v. 4 (10), S3059-S3061, 2015.
  19. N. Ramanan, B. Lee, and V. Misra, “Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory”, Applied Physics Letters, 106, 243503, 2015.
  20. V. Misra, A. Bozkurt, B. Calhoun, T. Jackson, J. Jur, J. Lach, B. Lee, J. Muth, O. Oralkan, M. Ozturk, S. Trolier-McKinstry, D. Vashaee, D. Wentzloff, and Y. Zhu, “Flexible Technologies for Self-Powered Wearable Health and Environmental Sensing”, IEEE Proceedings, vol. 103, no. 4, pp. 665-681, 2015. (Invited)
  21. X. Yang, B. Lee, and V. Misra, “High mobility 4H-SiC lateral MOSFETs using lanthanum silicate and atomic layer deposited SiO2”, IEEE Electron Device Letters, vol. 36, no. 4, pp. 312-314, 2015.
  22. R. Singamaneti, J. T. Prater, S. Nori, D. Kumar, B. Lee, V. Misra, and J. Narayan, “Ferroeletric and magnetic properties of multiferroic BiFeO3-La0.7Sr0.3MnO3 heterostructures integrated with Si (100)”, J. Applied Physics, 117 (17), 17D908, 2015.
  23. N. Ramanan, B. Lee, and V. Misra, “Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOSHFET Devices”, IEEE Transaction on Electron Device, vol. 62, no. 2, pp. 546-553, 2015.
  24. N. Ramanan, B. Lee, and V. Misra, “Device modeling for understanding AlGaN/GaN HEMT gate-lag”, IEEE Transaction on Electron Device, vol. 61, no. 6, pp. 2012-2018, 2014.
  25. C. Kirkpatrick, B. Lee, N. Ramanan, and V. Misra, “Flash MOS-HFET operational stability for power converter circuits”, Physica Status Solidi (c), vol. 11, Issue. 3-4, pp. 875-878, 2014.
  26. B. Sarkar, N. Ramanan, S. Jayanti, N. Di Spigna, B. Lee, P. Franzon, and V. Misra, “Dual floating gate unified memory MOSFET with simultaneous dynamic and non-volatile operation”, IEEE. Electron Device Letters, vol. 35, no. 1, pp. 48-50, 2014.
  27. B. Lee, Y. Choi, C. Kirkpatrick, A Q Huang, and V. Misra, “Improved high-temperature device transport properties and off-state characteristics of AlGaN/GaN power devices with atomic layer deposition (ALD) HfAlO high-k dielectrics”, Semicond. Sci. Technol., vol. 28, 074016, 2013. (Invited)
  28. N. Ramanan, B. Lee, C. Kirkpatrick, R. Suri, and V. Misra, “Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation”, Semicond. Sci. Technol., vol. 28, 074004, 2013. (Invited)
  29. C. Kirkpatrick, B. Lee, R. Suri, X. Yang, and V. Misra, “Atomic layer deposition of SiO2 for AlGaN/GaN MOS-HFETs”, IEEE Electron Device Letters, vol. 33, Issue 9, pp.1240-1242, 2012.
  30. V. Kaushal, I. Iniguez-de-la-Torre, T. Gonzalez, J. Mateos, B. Lee, V. Misra, and M. Margala, “Effect of high-k dielectric on the performance of III-V Ballistic deflection transistors”, IEEE Electron Device Letters, vol. 33, Issue 8, pp. 1120-1122, 2012.
  31. B. Lee, C. Kirkpatrick, Y. Choi, X. Yang, A. Q. Huang, and V. Misra, “Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application”, Physica Status Solidi (c), vol. 9, Issue 3-4, pp. 868-870, 2012.
  32. C. Kirkpatrick, B. Lee, Y. Choi, A. Q. Huang, and V. Misra, “Threshold voltage stability comparison in AlGaN/GaN FLASH MOS-HFETs utilizing charge trap or floating gate charge storage”, Physica Status Solidi (c), vol. 9, Issue. 3-4, pp. 864-867, 2012.
  33. B. Lee, S. R. Novak, N. Biswas, and V. Misra, “The role of Rare Earth Metals (RE=Gd and Eu) on effective work function modulation for Ni-FUSI gate electrode for NMOS application”, Japanese Journal of Applied Physics, vol. 51, 011802, 2012.
  34. B. Lee, D. J. Lichtenwalner, S. R. Novak, and V. Misra, “Impact of AlTaO dielectric capping on device performance and reliability for advanced metal gate/high-k PMOS application”, IEEE Transactions on Electron Devices, vol. 58, Issue. 9, pp.2928-2935, 2011.
  35. B. Lee, S. R. Novak, D. J. Lichtenwalner, X. Yang, and V. Misra, “Investigation of the origin of VT/VFB Modulation by La2O3 capping layer approaches for NMOS Application: Role of La diffusion, effect of host high-k layer, and interface properties”, IEEE Transactions on Electron Devices, vol. 58, Issue. 9, pp. 3106-3115, 2011.
  36. J. C. Jeff, M. Yun, B. Ramalingam, B. Lee, V. Misra, G. Triplett, and S. Gangopadhyay, “Charge storage characteristics of ultra-small Pt nanoparticle embedded GaAs based non-volatile memory”, Applied Physics Letters, vol. 99, 072104, 2011.
  37. C. Kirkpatrick, B. Lee, X. Yang, and V. Misra, “Performance Improvement of AlGaN/GaN High Electron Mobility Transistors with Atomic Layer Deposition (ALD) of SiO2 and HfAlO dielectric” Physica Status Solidi (c), vol. 8, Issue. 7-8, pp. 2445-2447, 2011.
  38. S. R. Novak, B. Lee, X. Yang, and V. Misra, “Platinum Nanoparticles Grown by Atomic Layer Deposition for Charge Storage Memory Applications”, Journal of Electrochemical Society, 157 (6), H589. 2010.
  39. R. Suri, B. Lee, N. Biswas, D. Lichtenwalner, and V. Misra, “Electrical characteristics of metal-oxide-semiconductor capacitors on p-type GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric”, Applied Physics Letters, vol. 93. pp. 193504, 2008.
  40. B. Chen, B. Lee, S. Sarkar, S. Gowda, and V. Misra, "Molecular Memory Device formed by HfO2Encapsulation of Redox Active Molecules". Applied Physics Letters, vol. 91, pp. 173111, 2008.
  41. B. Lee, N. Biswas, S. R. Novak, and V. Misra, "Characteristics of Ni-Gd FUSI for NMOS Applications," IEEE Electron Device Letters, vol. 28 (7), pp 555-557, 2007.
  42. B. Chen, R. Jha, H. Lazar, N. Biswas, J. Lee, B. Lee, L. Wielunski, E. Garfunkle, and V. Misra, "Influence of Oxygen Diffusion Through Capping Layer of Low Work Function Metal Gate Electrodes", IEEE Electron Device Letters, vol. 27 (4), pp 228-230, 2006.

Peer-reviewed Conference Proceedings

  1. E. Ashik, V. Misra, and B. Lee, “High Mobility 4H-SiC p-MOSFET via ultrathin ALD B2O3 interface between SiC and SiO2”, International Conference on Silicon Carbide and Related Materials (ICSCRM 2023).
  2. Y. Zhou, J. Dieffenderfer, E. Sennik, M. Aleem, J. Speight, S. Vasisht, O. Oralkan, B. Lee, and V. Misra, “A novel multimodal E-nose platform,” IEEE Sensors 2023
  3. H Zhang, T. Liu, U. Gupta, S. Isukapati, E. Ashik, A. Morgan, B. Lee, W. Sung, A. Agarwal, and A. Fayed, “A 600V Half-bridge power stage fully integrated with 25V gate-drivers in SiC CMOS technology”, Proceeding of IEEE International Midwest Symposium on Circuits and Systems (MWSCAS) 2022, August 2022.
  4. E. Ashik , S. Isukapati, H. Zhang, T. Liu, , A. Morgan, V. Misra, W. Sung, A. Fayed, A. Agarwal, and B. Lee, “ Bias temperature instability on SiC n- and p-channel MOSFETs for high temperature CMOS applications”, Proceedings of IEEE International Reliability Physics Symposium (IRPS), 3B, 4.1-4.8 2022.
  5. B. Lee, M. Lim, and V. Misra, “Wearable skin vapor sensing system for continuous monitoring of various health and lifestyle”, IEEE Sensors Conference 2021.
  6. S. Isukapati, H. Zhang, T. Liu, E. Ashik, B. Lee, A. Morgan, W. Sung, A. Fayed, and A. Agarwal, “Development of isolated CMOS and HV MOSFET on an n-epi/p-epi/4H SiC n+ substrate for power IC applications”, 8th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2021).
  7. T. Liu, H. Zhang, S. Isukapati, E. Ashik, B. Lee, A. Morgan, W. Sung, Marvin H. White, A. Fayed, and A. Agarwal, “Spice modeling and circuit development of a SiC power IC technology”, 64th IEEE International Midwest Symposium on Circuits and Systems, 2021.
  8. S. Isukapati, H. Zhang, T. Liu, E. Ashik, B. Lee, A. Morgan, W. Sung, A. Fayed, and A. Agarwal, “Monolithic Integration of Lateral HV Power MOSFET with LV CMOS for SiC Power IC Technology”, accepted to ISPSD 2021.
  9. F. Mohaddes, Y. Zhou, F. Akbulut, B. Lee, and V. Misra, “Simultaneous Monitoring of ECG and EDA using a wearable armband for analyzing sympathetic nerve activity”, Submitted to ECS/IMCS 2021.
  10. M. Lim and B. Lee*, “Development of a Portable Monitoring System for Indoor E-Cigarette Emission”, IEEE Sensors Conference 2020.
  11. R. Agarwala, P. Wang, A. Tanneeru, B. Lee, V. Misra, and B. Calhoun, “An 88.6nW Ozone Pollutant Sensing Interface IC with a 159 dB dynamic Range”, Proceedings of ISLPED 2020, August 2020. (Best Paper Candidate)
  12. V. Misra, A. Bozcurt, B. Calhoun, S. Datta, M. Dickey, M. Kiani, J. Lack, B. Lee, J. Jur, O. Oralkan, M. Ozturk, R. Rahagopolan, S. Roundy, J. Strohmaier, S. Trolier-MaKinstry, D. Vashaee, D. Wentzloff, and D. Werner, “Optimizing the energy balance to achieve autonomous self-powering for vigilant health and IoT applications”, Journal of Physics: Conference Series, 1407 012001, 2019.
  13. A. Tanneeru, P. Akbulut, B. Lee, and V. Misra, “A novel monolithic array of multiple metal oxide sensors for E-nose applications via selective on-chip annealing of nanolayered ALD stacks”, Proceedings of 2019 IEEE Sensors Conference, October 2019. (Best Paper Candidate)
  14. A. Tanneeru, Z. Taylor, B. Lee, and V. Misra, “Highly sensitive ALD SnO2 sensors and the role of its thickness in gas sensing capabilities”, Proceedings of IEEE Sensors Conference, October 2018.
  15. F. Akbulut, K. Lawless, A. Tanneeru, S. Rao, Lee, and V. Misra, “Estimation of Beat-to-Beat interval from wearable photoplethysmograpy sensor on different measurement sites during daily activities”, Proceedings of 2018 IEEE Sensors Conference, October 2018.
  16. A. Tanneeru, B. Lee, and V. Misra, “Building blocks of a new ALD E-nose-a first step: N-type and P-type ALD sensors”, Proceedings of 2018 IEEE Sensors Conference, October 2018.
  17. M. Kang, B. Lee*, and V. Misra, “Improved Threshold Voltage Instability in 4H-SiC MOSFETs with Atomic Layer Deposited SiO2”, Material Science Forum, vol. 924, pp. 498-501, 2018.
  18. M. Kang, K. Lawless, B. Lee*, and V. Misra, “Effect of High Temperature Forming Gas Annealing on Electrical Properties of 4H-SiC Lateral MOSFETs with Atomic Layer Deposited Lanthanum Silicate and SiO2 Gate Dielectric”, Material Science Forum, vol. 924, pp. 482-485, 2018.
  19. F. Azam, B. Lee, and V. Misra, “Optimization of ALD high-k gate dielectric to improve AlGaN/GaN MOS-HFET DC characteristics and reliability”, Proceedings of 2017 IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), November 2017.
  20. S. Mills, B. Lee, and V. Misra, “Reliability of Atomic Layer Deposited SnO2 Ozone sensors operated at room temperature”, Proceedings of IEEE Sensors, November 2017.
  21. M. Lim, A. Malhotra, S. Mills, J. Muth, B. Lee, and V. Misra, “Metal oxide gas sensing characterization by low frequency noise spectroscopy”, Proceedings of IEEE Sensors, October 2016.
  22. A. Tanneeru, S Mills, M. Lim, M Mahmud, J. Dieffenderfer, A. Bozkurt, T. Nagle, Lee, and V. Misra, "“Room temperature sensing of VOCs by atomic layer deposition of metal oxide”, Proceedings of IEEE Sensors, October 2016.
  23. V. Misra, B. Lee, P. Manickam, M. Lim, S. K. Pasha, S. Mills, and S. Bhansali, “Ultra-low power sensing platform for personal health and personal environmental monitoring”, Proceedings of IEEE International Electron Device Meeting, Technical Digest, 13.1.1-13.1.4, 2015. (invited)
  24. I. Ji, B. Lee, S. Wang, V. Misra, and A. Huang, “A new AlGaG/GaN power HFET employing partial deep trench drain structure for high voltage application”, Proceedings of 2015 IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), November 2015.
  25. X. Yang, B. Lee, and V. Misra, “Effect of post deposition annealing for high mobility 4H-SiC MOSFET utilizing lanthanum silicate and atomic layer deposited SiO2”, Proceedings of 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), pp. 117-120, 2014.
  26. I. Ji, S. Wang, B. Lee, H. Ke, V. Misra, and A. Huang, “Design and fabrication of high current AlGaN/GaN HFET for Gen III solid state transformer”, Proceedings of 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), pp. 117-120, 2014.
  27. X. Yang, B. Lee, and V. Misra, “High mobility 4H-SiC MOSFETs using lanthanum silicate interface engineering and ALD deposited SiO2”, Material Science Forum, vol. 778-780, pp. 557-561, 2014.
  28. B. Sarkar, B. Lee, and V. Misra, “Implications of lower zero-field activation energy of dielectric in Al2O3/HfO2 bilayer dielectric RRAM forming process”, ECS Transactions, vol. 64, Issue. 14, pp. 43-48, 2014.
  29. N. Ramanan, B. Lee, and V. Misra, “A Novel Methodology using Pulsed-IV for Interface or Border Traps Characterization on AlGaN/GaN MOSHFETs”, Proceedings of the 26th International Symposiums on Power Semiconductor Devices and ICs (ISPSD 2014), pp. 366-369, June. 2014.
  30. I. Ji, Y. H. Choi, B. Lee, S. Wang, V. Misra, and A. Q. Huang, “High Voltage AlGaN/GaN HFET Employing low taper angle field-plate for stable forward blocking capability”, Proceedings of the 26th International Symposiums on Power Semiconductor Devices and ICs (ISPSD 2014), pp. 269-272, June. 2014.
  31. O. Oralkan, S. Bhansali, A. Bozkurt, M. Dickey, B. Lee, T. Mayer, V. Misra, J. Moon, J. Muth, O. Velev, and Y. Zhou, “Sensors research at the NSF-ASSIST nanosystems engineering research center: Correlated sensing on environmental an physiological parameters using low-power wearable sensors”, ECS Transactions, Vol 61, 2014. (Invited)
  32. S. Mills, B. Lee, and V. Misra, “Atomic layer deposited TiO2 thin films for environmental gas sensing”, Proceeding of 2013 Proceedings of IEEE Sensors, November 2013.
  33. B. Sarkar, S. Jayanti, N. Di Spigna, B. Lee, V. Misra, and P. Franzon, “Investigation of intermediate dielectric for dual floating gate MOSFET”, Proceeding of IEEE NVMTS 2013, 2013
  34. B. Lee, Y. Choi, C. Kirkpatrick, A. Huang, and V. Misra, “Performance enhancement of AlGaN/GaN metal-oxide-semiconductor heterojunction field-effect transistor (MOSHFET) with atomic layer deposition (ALD) high-k HfAlO gate dielectric layer”, Proceeding of IEEE ISDRS, pp. 1-2, 2011.
  35. B. Lee, C. Kirkpatrick, Y. Choi, X. Yang, Y. Wang, X. Yang, A. Huang, and V. Misra, “Impact of ALD gate dielectrics and reliability of AlGaN/GaN MOSHFET devices”, ECS Transactions, vol. 41, Issue. 3, pp. 445-450, 2011.
  36. B. Lee, C. Kirkpatrick, X. Yang, S. Jayant, R. Suri, J. Roberts, and V. Misra, “Normally-Off AlGaN/GaN-on-Si MOSHFETs with TaN Floating Gates and ALD SiO2 Tunnel Dielectrics”, Proceedings of IEEE International Electron Device Meetings Technical Digest, , 2010.
  37. B. Lee, D. J. Lichtenwalner, M. Agustin, R. Arghavani, X. Tang, S. Gandikota, V. Ku, and V. Misra, "Investigation of VTshift Mechanism of High-k Dielectric caused by Lanthanum Capping for NMOS and Tantalum capping for PMOS Devices", ECS Transactions, vol. 13 (1), pp. 123-130, 2008.
  38. V. Misra, R. Jha, B. Chen, J. Lee, and B. Lee, "Feasibility of Dipole Based Work Function Tuning for Sub-1nm EOT Metal Gated High-K Stack", ECS Transactions, vol. 3 (2), pp 275-287, 2006. (Invited)
  39. N. Biawas, B. Lee, and V. Misra, "On the Issue of Work Function Tuning of Nickel Silicide Gates," ECS Transactions, vol. 3 (3), pp 317-331, 2006.
  40. R. Jha, B. Lee, B. Chen, S. Novak, P. Majhi, and V. Misra, "Dependence of PMOS Work Functions on Surface Conditions of High-K Dielectrics," Proceedings of IEEE International Electron Device Meetings Technical Digest, December, 2005.
  41. N. Biswas, S. Novak, B. Lee, B. Chen and V. Misra, "Work Function Tuning of Nickel Silicide by Varying Nickel and Silicon Composition", ECS Transactions, vol. 1 (5), pp 295, 2005.

Patents

  1. B. Lee and V. Misra, "Monolithically Integrated and Densely Packed Array Sensor Platform for Untra-low power Gas Sensing Applications", US. Patent Application No. 17/764,332, 2022. (Pending)
  2. B. Lee and V. Misra, "Monolithically Integrated and Densely Packed Array Sensor Platform for Untra-low power Gas Sensing Applications", International Patent Application No. PCT US2020/054012, 2020. (Pending)
  3. B. Lee and V. Misra, “P-Type Environmental Stimulus Sensor”, United States Patent, No. 10352913, July 2019.
  4. B. Lee and V. Misra, “Novel and Highly Scalable Multi-material Metal oxide array Gas Sensors”, US Provisional Patent Application, No. 62/910,639, 2019.
  5. B. Lee and V. Misra, "P-type Gas Sensors”, US Provisional Patent Application, No. 62/292,484, 2016.
  6. C. Kirkpatrick, V. Misra, and B. Lee, “Gate Stack Utilizing Charge Storage for High Mobility, Enhancement mode GaN/AlGaN Heterostructures”, US Provisional Patent Application No. 61/ 564,782.

 

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