Cost competitive, high- Performance, highly Reliable (CPR) power device project is supported by The U.S. Department of Energy's Vehicle Technologies Office
Project Description
- Development of 1.2kV 4H-SiC MOSFETs, JBS diodes, monolithically integrated MOSFETs and JBS diodes (JBSFETs), and edge termination technique to achieve specified breakdown voltage
- Establishing process baseline for fabricating cost-effective SiC MOSFETs
- Establishing the cell and edge termination structures for the best possible static performances.
- Evaluation and demonstration of reliability and ruggedness testing of fabricated 1.2kV MOSFETs
Research Highlight
- 1.2kV 4H-SiC MOSFETs, JBS diodes, and JBSFETs were successfully fabricated
- Process baseline for fabricating cost-effective 1.2kV devices were successfully established at the foundry
- Fabricated devices are currently being packaged and reliability and ruggedness will be evaluated
Image of fabricated 1.2kV SiC MOSFETs | Output characteristics of 1.2kV SiC MOSFETs | Blocking characteristics of 1.2kV SiC MOSFETs |