CPR SiC MOSFET

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Cost competitive, high- Performance, highly Reliable (CPR) power device project is supported by The U.S. Department of Energy's Vehicle Technologies Office

Project Description

  • Development of 1.2kV 4H-SiC MOSFETs, JBS diodes, monolithically integrated MOSFETs and JBS diodes (JBSFETs), and edge termination technique to achieve specified breakdown voltage
  • Establishing process baseline for fabricating cost-effective SiC MOSFETs
  • Establishing the cell and edge termination structures for the best possible static performances.
  • Evaluation and demonstration of reliability and ruggedness testing of fabricated 1.2kV MOSFETs

Research Highlight

  • 1.2kV 4H-SiC MOSFETs, JBS diodes, and JBSFETs were successfully fabricated
  • Process baseline for fabricating cost-effective 1.2kV devices were successfully established at the foundry
  • Fabricated devices are currently being packaged and reliability and ruggedness will be evaluated
Wafer image Drain source chart MOSFET chart
Image of fabricated 1.2kV SiC MOSFETs Output characteristics of 1.2kV SiC MOSFETs Blocking characteristics of 1.2kV SiC MOSFETs

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