Manufacturing of Ultra-high-voltage SiC devices (MUSiC) project is supported by the U.S. Army Research Laboratory (ARL) and the Office of Naval Research Laboratory (ONR)

Project Description

• Development of ultra-high-voltage 12-15kV 4H-SiC MOSFETs, JBS diodes, monolithically integrated MOSFETs and JBS diodes (JBSFETs), and robust edge termination technique to achieve specified breakdown voltage
• Establishing process baseline for fabricating ultra-high-voltage devices at foundry company
• Evaluation of defects and BPDs on 125-150µm thick,  4H-SiC epi-layers
• Evaluation and demonstration of package and circuit level testing of fabricated devices

Research Highlight

• 12kV 4H-SiC MOSFETs, JBS diodes, and JBSFETs were successfully fabricated
• Process baseline for fabricating 12kV devices were successfully establishing at the foundry, despite the manufacturing challenges from bow and warpage of thick epi layer
• Fabricated devices are currently being packaged and will be evaluated in circuit level

Image of fabricated 13kV 4H-SiC wafer	Cross-sectional SEM image of fabricated 13kV 4H-SiC MOSFET	Measured electrical characteristics