Scalable, Manufacturable, And Robust Technology for SiC Power Integrated Circuits (SMART SiC Power ICs) is a collaborative project supported by Advanced Research Projects Agency-Energy (ARPA-E).

Project Description

• Development of innovative process technologies for the monolithic integration of HV and LV devices
• Establishment of a manufacturable process baseline in the state-of-the-art, 150mm, SiC fabrication facility
• Development of highly scalable CMOS with an advanced gate stack for high channel mobilities
• Adaptation of developed technology to implement and demonstrate SiC Power IC designs (Buck converter and Half-bridge Driver)
• Creation of Process Design Kit (PDK) to streamline circuit design, layout and fabrication tasks

Research Highlights

• Currently tapped out LOT1 which included discrete 600V Lateral NMOS and PMOS, 600V JBS diodes, LV CMOS, circuits like Comparator, Amplifier, Inverter, Oscillators (1MHz-10MHz) and various test structures.
• Packaging efforts (Level-1 and Level-2) for the SMART SiC Power IC bare die and electrical test setup have already begun and an appropriate packaging solution is determined

Layout mask for LOT 1	Cross-sectional view of a lateral 600V N-type MOSFET	SMART SiC Power IC test and packaging process flow